TRANSFERRED ELECTRON-INTENSIFIED
PHOTODIODE DETECTOR (TE-IPD)
This Phase II NASA contract began in February of 1995. Its objective was to develop a sensitive photodetector with photomultiplier-like characteristics, tailored for the 950 nm through 1650 nm wavelength region. Along with Intevac ATD, our principal subcontractor, we have developed and characterized variants of devices with excellent performance. In addition, EOO has designed and built special power supplies for these detectors. The project was complete in October 1996, and resulted in several prototype single pixel devices optimized for 1060 nm and 1550 nm operation.

Intevac has continued to develop the TE-IPD as a commercial product while EOO has continued to find system applications for the device. A 2x2 Green variant was included in the 3-D Imaging  Ladar receiver work discussed in the Optical Radar Section.  To date, the following characteristics have been demonstrated for the TE-IPD detectors:

• Cathodes with quantum efficiencies up to 40% at 1060 nm and 30% at 1550 nm
• Dark currents down to 60 pA in the 2x2 mm cathode 1550 nm optimized devices
• Noiseless gains up to 20,000
• Devices with noise factors of less than 1.2
• Response times <500 psec.

Other component developments such as specialty lasers have been undertaken by EOO where they are not available commercially or being developed by others as reported in the literature. However, we primarily work with other laser, detector and chip developers to obtain /develop key components for our systems applications.


For More Information, you may contact Dan Radecki at:
269 N. Mathilda Avenue
Sunnyvale, CA 94086
Phone: (408) 738-5393
Fax: (408) 738-5399
E-mail: info@eooinc.com